Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
2SA940
TRANSISTOR (PNP)
TO-220
1. BASE 2. COLLECTOR
FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃)
3. EMITTER
Collector current : -1.5 A ICM Collector-base voltage V V(BR)CBO : -150 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE
unless otherwise specified)
Test conditions MIN TYP MAX UNIT V V V
Ic=-100µA, IE=0 Ic=-1mA, IB=0 IE=-100µA, IC=0 VCB=-120V, IE=0 VEB=-5V, IC=0 VCE=-10V, IC=-500mA IC=-500mA, IB=-50mA VCE=-10V, IC=-500mA VCE=-10V, IC=-500mA VCB=-10V, IE=0, f=1MHz
-150 -150 -5 -10 -10 40 140 -1.5
-0.65
µA µA
V V MHz pF
-0.85 4 55
fT
Cob
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