2SA966

Transys Electronics LIMITED TO-92MOD Plastic-Encapsulated Transistors 2SA966 FEATURE Power dissipation PCM : 0.9 TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR W(Tamb=25℃) 3. BASE Collector current A ICM : -1.5 Collector-base voltage V V(BR)CBO : -30 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE unless otherwise specified) Test conditions MIN -30 -30 -5 -0.1 -0.1 100 320 -2 -1 100 V V MHz MAX UNIT V V V µA µA Ic= -1mA , IE=0 IC= -10 mA , IB=0 IE= -1mA, IC=0 VCB= -30 V , IE=0 VEB= -5V , IC=0 VCE=-2 V, IC= -500mA IC= -1.5 A, IB= -0.03A IC= -500 mA, VCE= -2V VCE= -2 V, IC= -500mA fT CLASSIFICATION OF hFE(1) Rank Range O 100-200 Y 160-320