2SB1119

Transys Electronics LIMITED SOT-89 Plastic-Encapsulated Transistors 2SB1119 FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -1 A ICM: Collector current (Pulse) ICP: -2 A Collector-base voltage -25 V V(BR)CBO: Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(SAT) VCE=-2V, IC=-1A IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, f=1MHz Test conditions MIN TYP MAX UNIT V V V Ic=-10µA, IE=0 Ic=-1mA, IB=0 IE=-10µA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-50mA -25 -25 -5 -0.1 -0.1 100 40 -0.7 -1.2 180 25 560 µA µA V v MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking R 100-200 S 140-280 BB T 200-400 U 280-560