2SB1132

Transys Electronics LIMITED SOT-89 Plastic-Encapsulated Transistors 2SB1132 FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) TRANSISTOR (PNP) SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Collector current -1 A ICM: Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) Test conditions MIN TYP MAX UNIT V V V Ic=-50µA, IE=0 Ic=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-3V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-50mA, f=30MHz VCB=-10V, IE=0, f=1MHz -40 -32 -5 -0.5 -0.5 82 390 -0.5 150 20 30 µA µA V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking P 82-180 BAP Q 120-270 BAQ R 180-390 BAR