2SB1188

Transys Electronics LIMITED SOT-89 Plastic-Encapsulated Transistors 2SB1188 TRANSISTOR (PNP) SOT-89 1. BASE FEATURES Power dissipation PCM: 0.5 Collector current -2 ICM: Collector-base voltage V(BR)CBO: -40 W (Tamb=25℃) A 1 2. COLLECTOR 2 3. EMITTER 3 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain * Collector-emitter saturation voltage * Transition frequency Output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCe(sat) Test conditions MIN -40 -32 -5 -1 -1 82 390 -0.8 80 65 V MHz pF MAX UNIT V V V µA µA Ic=-50µA , IE=0 IC= -1mA , IB=0 IE=-50µA, IC=0 VCB=-20 V , IE=0 VEB=-4 V , IC=0 VCE=-3V, IC= -0.5A IC=-2A, IB= -0.2A VCE=-5V, IC=-0.5A ,f=30MHz VCB=-10V, IE=0 ,f=1MHz fT Cob * Measured using pulse current. CLASSIFICATION OF hFE Rank Range Marking p 82-180 BCP Q 120-270 BCQ R 180-390 BCR