2SB1197K

Transys Electronics LIMITED SOT-23-3L Plastic-Encapsulated Transistors 2SB1197K TRANSISTOR (PNP) FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 Collector current ICM: -800 mA Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 0. 0. 95¡ À 025 2. 80¡ À 05 0. 1. 60¡ À0. 05 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob unless otherwise specified) Test conditions MIN -40 -32 -5 -0.5 -0.5 82 390 -0.5 50 200 12 30 V MHz pF TYP MAX UNIT V V V µA µA Ic=-50µA, IE=0 Ic=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-3V, IC=-100mA IC=-0.5A, IB=-50mA VCE=-5V, IC=-50mA f=100MHz VCE=-10V, IC=0 f=1MHz CLASSIFICATION OF hFE(1) Rank Range Marking P 82-180 AHP Q 120-270 AHQ R 180-390 AHR 0. 35 2. 92¡ À0. 05 1. 9