2SB1260

Transys Electronics LIMITED SOT-89 Plastic-Encapsulated Transistors 2SB1260 TRANSISTOR (PNP) SOT-89 1. BASE FEATURES Power dissipation 0.5 PCM: Collector current -1 ICM: Collector-base voltage -80 V(BR)CBO: W (Tamb=25℃) A V 2. COLLECTOR 3. EMITTER 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage unless otherwise specified) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Test conditions MIN -80 -80 -5 -1 -1 82 390 -0.4 V MAX UNIT V V V µA µA Ic=-50µA , IE=0 IC= -1mA , IB=0 IE=-50µA, IC=0 VCB=-60 V , IE=0 VEB=-4 V , IC=0 VCE=-3V, IC= -0.1A IC=-500 mA, IB= -50mA VCE= -5V, IC=- 50mA Transition frequency fT f = 30MHz 80 MHz CLASSIFICATION OF hFE Rank Range P 82-180 Q 120-270 R 180-390 Marking ZL