2SB1308

Transys Electronics LIMITED SOT-89 Plastic-Encapsulated Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TRANSISTOR (PNP) SOT-89 1. BASE 0.5 -3 -30 W (Tamb=25℃) A V 2. COLLECTOR 1 3. EMITTER 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency * Measured using pulse current. unless otherwise specified) Test conditions MIN -30 -20 -6 -0.5 -0.5 82 390 -0.45 50 V MHz MAX UNIT V V V µA µA Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE * VCEsat * Ic=-50µA , IE=0 IC= -1mA , IB=0 IE=-50µA, IC=0 VCB=-20 V , IE=0 VEB=-5 V , IC=0 VCE=-2V, IC= -0.5A IC=-1.5A, IB= -0.15A VCE= -6V, IC=-50mA f =30MHz fT CLASSIFICATION OF hFE Rank Range P 82-180 Q 120-270 R 180-390 Marking BFP,BFQ,BFR