2SB1322A

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SB1322A FEATURES Power dissipation PCM: 1 W (Tamb=25℃) TRANSISTOR (PNP) TO-92 1. EMITTER 2. COLLECTOR Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-10µA, IE=0 Ic=-2mA, IB=0 IE=-10µA, IC=0 VCB=-20V, IE=0 VEB=-5V, IC=0 VCE=-10V, IC=-0.5A VCE=-5V, IC=-1A IC=-0.5A, IB=-50mA IC=-0.5A, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz -60 -50 -5 -0.1 -0.1 85 50 -0.4 -1.2 200 30 µA µA 340 V V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking Q 85-170 R 120-240 S 170-340