Transys
Electronics
LIMITED
TO-92MOD Plastic-Encapsulated Transistors
TO-92MOD
1. EMITTER 2. COLLECTOR 3. BASE
2SB647/2SB647A
FEATURE Power dissipation PCM:
TRANSISTOR (PNP)
0.9 W (Tamb=25℃)
Collector current -1 A ICM: Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage 2SB647
unless otherwise specified)
Test conditions MIN -120 -80 -100 -5 -10 60 60 30 -1 140 V MHz 320 200 MAX UNIT V V V µA
Symbol V(BR)CBO V(BR)CEO 2SB647A
Ic= -10µA , IE=0 IC=-1mA , IB=0 IE= -10µA, IC=0 VCB= -100 V, IE=0 VCE=-5 V, IC= -150mA VCE=-5 V, IC= -500mA IC=-500mA, IB=-50mA VCE=-5V, IC= -150mA VCE=-10V, IE=0 f=1 MHz
Emitter-base breakdown voltage Collector cut-off current 2SB647 2SB647A DC current gain
V(BR)EBO ICBO hFE(1)* hFE(2)
Collector-emitter saturation voltage Transition frequency
VCEsat
fT Cob
Output capacitance
20
pF
CLASSIFICATION OF hFE Rank
2SB647 Range 2SB647A 60-120 100-200 B 60-120 C 100-200 D 160-320
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