2SB766

Transys Electronics LIMITED SOT-89 Plastic-Encapsulated Transistors 2SB766 FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -1 A ICM: Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) VCE=-5V, IC=-1A unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-10µA, IE=0 Ic=-2mA, IB=0 IE=-10µA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-500mA -30 -25 -5 -0.1 -0.1 85 50 -0.2 -0.85 µA µA 340 IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA, f=200MHz VCB=-10V, IE=0, f=1MHz -0.4 -1.2 V V MHz fT Cob 200 20 30 pF CLASSIFICATION OF hFE(1) Rank Range Marking Q 85-170 AQ R 120-240 AR S 170-340 AS