2SB892

Transys Electronics LIMITED TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SB892 FEATURE Power dissipation PCM: TRANSISTOR (PNP) 2. COLLECTOR 1 W (Tamb=25℃) 3. BASE Collector current -2 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1) DC current gain HFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) unless otherwise specified) Test conditions MIN -60 -50 -6 -0.1 -0.1 100 40 -0.4 -1.2 150 V V MHz 560 MAX UNIT V V V µA µA Ic= -10µA , IE=0 IC= -1mA , IB=0 IE=- 100µA, IC=0 VCB= -50V , IE=0 VEB= -4V , IC=0 VCE=-2V, IC= -100mA VCE=-2V, IC= -1.5A IC= -1A, IB= -50mA IC= -1A, IB= -50mA VCE= -10 V, IC= -50mA fT CLASSIFICATION OF hFE(1) Rank Range R 100-200 S 140-280 T 200-400 U 280-560