2SB985

Transys Electronics LIMITED TO-92MOD Plastic-Encapsulated Transistors 2SB985 TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (PNP) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-10µA, IE=0 Ic=-1mA, IB=0 IE=-10µA, IC=0 VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-100mA VCE=-2V, IC=-3A IC=-2A, IB=-100mA IC=-2A, IB=-100mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz -60 -50 -6 -1 -1 100 40 -0.7 -1.2 100 50 µA µA 560 V V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range R 100-200 S 140-280 T 200-400 U 280-560