2SC1008

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SC1008 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 0.8 W (Tamb=25℃) 2. BASE Collector current ICM: 0.7 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) unless otherwise specified) Test conditions MIN 80 60 8 0.1 0.1 40 400 0.4 1.1 30 V V MHz TYP MAX UNIT V V V µA µA Ic= 100µA , IE=0 IC= 10mA , IB=0 IE= 10µA, IC=0 VCB=60 V , IE=0 VEB= 5 V , IC=0 VCE= 2 V, IC=50mA IC= 500mA, IB=50 mA IC=500mA, IB=50mA VCE=10V, IC= 50mA fT CLASSIFICATION OF hFE Rank Range R 40-80 O 70-140 Y 120-240 G 200-400