2SC1959

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SC1959 FEATURE Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 35 V V(BR)CBO: Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ: 150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1) DC current gain hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency VCE(sat) VBE VCE=6 V, IC= 400mA 3. BSAE 123 unless otherwise specified) Test conditions MIN 35 30 5 0.1 0.1 70 25 0.25 1.0 200 V V MHz 400 TYP MAX UNIT V V V µA µA Ic= 100µA , IE=0 IC= 1 mA , IB=0 IE= 100µA, IC=0 VCB= 35V , IE=0 VEB= 5 V , IC=0 VCE=1 V, IC= 100mA IC= 100 mA, IB= 10 mA VCE= 1V, IC= 100 mA VCE= 12 V, IC= 2mA fT CLASSIFICATION OF hFE Rank hFE (1) Range hFE (2) 25(min) 40(min) O 70-140 Y 120-240 GR 200-400