2SD1758

Transys Electronics LIMITED TO-252-2 Plastic-Encapsulated Transistors 2SD1758 TO-252-2 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current 2 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) 1 23 unless otherwise specified) Test conditions MIN 40 32 5 1 1 82 390 0.8 80 V MHz TYP MAX UNIT V V V µA µA Ic=50µA , IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=-20V , IE=0 VEB=4V , IC=0 VCE= 3V , IC=500mA IC=2A, IB=0.2A VCE= 5V, IE= 50mA,f=100MHz fT