2SD1899-Z

Transys Electronics LIMITED TO-252 Plastic-Encapsulated Transistors 2SD1899-Z FEATURES Power dissipation PCM: 2 W (Tamb=25℃) TRANSISTOR (NPN) TO-252 1. BASE 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn on Time Switching Time Storage Time Fall Time VCE(sat) VBE(sat) 3. EMITTER 1 23 unless otherwise specifie) Test conditions MIN TYP MAX UNIT V V V Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA,IC=0 VCB=60V, IE=0 VEB=7V, IC=0 VCE=2V, IC=200mA VCE=2V, IC=600mA VCE=2V, IC=2A IC=1.5A, IB=150mA IC=1.5A, IB=150mA VCE=5V, IC=1.5A VCB=10V, IE=0, f=1MHz 60 60 7 10 10 60 100 50 0.25 1.2 120 30 0.5 400 µA µA V V MHz pF fT Cob ton tstg tf VCC=30V, IC=1A, IB1=-IB2=-0.05A 2.0 0.5 µs CLASSIFICATION OF hFE(1) Rank Range M 100-200 L 160-320 K 200-400