2SD2118

Transys Electronics LIMITED TO-252-2Plastic-Encapsulated Transistors 2SD2118 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) TO-252-2 TRANSISTOR (NPN) 0 9. 70¡ À. 20 0 0. 75¡ À. 10 6. 50¡ À. 15 0 5. 30¡ À. 10 0 0. 51¡ À. 05 0 2. 30¡ À. 10 0 5¡ ã 1. 20 0 . 51¡ À. 10 0 0¡ 0 . 10 « 5¡ ã 5¡ ã 1. BASE 2. 30¡ À. 10 0 0. 60¡ À. 10 0 0 1. 60¡ À. 15 2. 30¡ À. 10 0 0. 51 2. COLLECTOR 123 3. EMITTER Collector current 5 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=50µA, IE=0 Ic=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500mA IC=4A, IB=100mA VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0, f=1MHz 50 20 6 0.5 0.5 120 390 1 150 30 0 2. 70¡ À. 20 0¡ ¡ ã« ¡ ã 9 0. 6 0. 80¡ À. 10 0 0 5. 50¡ À. 10 µA µA V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking Q 120-270 R 180-390 Typical Characteristics 2SD2118