2SD2583

Transys Electronics LIMITED TO-126 Plastic-Encapsulated Transistors 2SD2583 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (NPN) TO-126 Collector current 5 A ICM: Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) VCE=2V, IC=4A IC=1A, IB=50mA Collector-emitter saturation voltage VCE(sat) IC=2A, IB=100mA IC=4A, IB=200mA Base-emitter saturation voltage Transition frequency Collector output capacitance VBE(sat) IC=2A, IB=100mA 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=0.1mA, IE=0 Ic=1mA, IB=0 IE=0.1m A, IC=0 VCB=30V, IE=0 VEB=6V, IC=0 VCE=2V, IC=1A 30 30 6 0.1 0.1 150 50 0.15 0.25 0.5 1.5 120 77 600 µA µA V V MHz pF fT Cob VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz