3DD13002

Transys Electronics LIMITED TO-251 Plastic-Encapsulated Transistors 3DD13002 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-251 1.25 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current ICM: 1A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) fT tf ts 1 2 3 unless otherwise specified) Test conditions MIN 600 400 6 100 100 9 5 0.8 1.1 5 0.5 2.5 V V MHz µs µs 40 TYP MAX UNIT V V V µA µA Ic= 100µA, IE=0 Ic=1mA, IB=0 IE= 100µA, IC=0 VCB= 600V, IE=0 VEB= 6V, IC=0 VCE= 10V, IC= 200 mA VCE= 10V, IC=250 µA IC=200mA, IB= 40 mA IC=200mA, IB= 40 mA VCE=10V, Ic=100mA f =1MHz IC=1A, IB1=-IB2=0.2A VCC=100V CLASSIFICATION OF hFE(2) Rank Range 9-15 15-20 20-25 25-30 30-35 35-40