3DD13005

Transys Electronics LIMITED TO-220 Plastic-Encapsulated Transistors 3DD13005 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current 4 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition Frequency Fall time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE (sat) VBE (sat) f t T 123 unless otherwise specified) Test conditions MIN 700 400 9 1000 100 1000 10 40 0.6 1.6 5 0.9 4 V V MHz µs µs TYP MAX UNIT V V V µA µA µA Ic= 1000µA, IE=0 Ic= 10mA, IB=0 IE= 1000µA, IC=0 VCB= 700V, IE=0 VCE= 400V, IB=0 VEB=9V, IC=0 VCE= 5V, IC= 1000mA IC=2000mA, IB=500 mA IC=2000mA, IB= 500mA VCE=10 V, IC=500mA f = 1MHz IB1=-IB2=0.4A, IC=2A VCC=120V f ts CLASSIFICATION OF hFE Rank Range 10-15 15-20 20-25 25-30 30-35 35-40