BAS16LT1

Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes BAS16LT1 FEATURES Power dissipation PD: 225 mW (Tamb=25℃) 1. 0 2. 4 1. 3 SWITCHING DIODE SOT-23 TJ, Tstg: -55℃ to +150℃ 0. 95 Unit: mm M ki ng A6 ar M ki ng A6 ar ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR unless otherwise specified) Test conditions MIN 75 1 MAX UNIT V IR= 100µA VR=75V 0. 4 Forward Current 200 m A IF: Reverse Voltage 75 V VR: Operating and storage junction temperature range 2. 9 1. 9 0. 95 µA IF=1mA Forward voltage VF IF=10mA IF=50mA IF=150mA Diode capacitance CD t rr 715 855 1000 1250 2 6 mV VR=0V, f=1MHz pF nS Reverse recovery time