BAS19LT1

Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes BAS19LT1 FEATURES Power dissipation 1. 0 SWITCHING DIODE SOT-23 PD: 225 mW (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ 0. 95 Forward Current 200 m A IF: Reverse Voltage 120 V VR: Operating and storage junction temperature range 2. 4 1. 3 2. 9 1. 9 0. 95 Unit: mm M ki ng JP ar M ki ng JP ar ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage Forward Diode voltage capacitance leakage current Symbol V(BR) IR VF CD t rr unless otherwise specified) Test conditions MIN 120 0.1 1000 1250 5 50 MAX UNIT V IR= 100µA VR=100V IF=100mA IF=200mA VR=0V, f=1MHz 0. 4 µA mV pF nS Reverse recovery time