BAS40W-04

BAS40W SERIES FEATURES SCHOTTKY DIODE SOT-323 1. 25¡ À0. 05 1. 01 R EF Power dissipation PD: 200 mW (Tamb=25℃) 1. 30¡ À0. 03 2. 30¡ À0. 05 Collector current 200 mA IF: Collector-base voltage 40 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ Unit: mm BAS40W Marking: 43.K43 BAS40W-04 Marking:44.K44 BAS40W-05 Marking: 45.K45 BAS40W-06 Marking: 46.K46 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reveres recovery time Symbol V(BR) R IR VF CD trr unless otherwise specified) Test conditions IR= 10µA VR=30V IF=1mA IF=40mA VR=0V, f=1MHz IF=10mA through IR=10mA to IR=1mA MIN 40 200 380 1000 5 5 MAX UNIT V 0. 30 2. 00¡ À0. 05 nA mV pF nS