BAS70W SERIES
FEATURES Power dissipation PD: 200
SCHOTTKY DIODE
SOT-323
1. BASE 2. EMITTER 3. COLLECTOR
1. 25¡ À0. 05
1. 01 R EF
mW (Tamb=25℃)
1. 30¡ À0. 03
2. 30¡ À0. 05
Collector current 70 mA IF: Collector-base voltage 70 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
Unit: mm
BAS70W Marking: K73
BAS70W-04 Marking: K74
BAS70W-05 Marking: K75
BAS70W-06 Marking: K76
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Reverse breakdown voltage Reverse voltage Forward Diode voltage capacitance leakage current Symbol V(BR) R IR VF CD trr
unless otherwise specified)
Test conditions IR= 10µA VR=50V IF=1mA IF=15mA VR=0V, f=1MHz IF=10mA through IR=10mA to IR=1mA MIN 70 100 410 1000 2 5 MAX UNIT V
0. 30
2. 00¡ À0. 05
nA
mV
pF
nS
Reveres recovery time
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