BAV70

Transys Electronics LIMITED SOT-23 Formed SMD Package BAV70 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES High speed switching diode pair, common cathode Marking BAV70 = A4 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = ANODE 2 = ANODE 3 = CATHODE 2 1 3 ABSOLUTE MAXIMUM RATINGS Continuous reverse voltage Repetitive peak reverse voltage Repetitive peak forward current Junction temperature Forward voltage at IF = 50 mA Reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω measured at IR = 1 mA Recovery charge when switched from IF = 10 mA to VR = 5 V; RL = 100 Ω VR VRRM IFRM Tj VF max. max. max. max. < 70 75 450 150 1 ,0 V V mA °C V trr Qs < < 4 ns 45 pc BAV70 RATINGS (per diode) Limiting values Continuous reverse voltage Repetitive peak reverse voltage Forward current (DC) Repetitive peak forward current Non-repetitive peak forward current (per crystal) t = 1 µs t = 1 ms t=1s Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient Tj = 25 °C unless otherwise specified Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current VR = 25 V; Tj = 150°C VR = 70 V VR = 70 V; Tj = 150°C Diode capacitance VR = 0; f = 1 MHz Forward recovery voltage when switched to IF = 10 mA; tr = 20 ns VR VRRM IF IFRM max. max. max. max. 70 75 215 450 V V mA mA IFSM IFSM IFSM Tstg Tj max. 4 max. 1 max. 0,5 -55 to +150 max. 150 A A A °C °C Rthj-a = 500 K/W VF VF VF VF IR IR IR Cd Vfr < < < < < < < < < 715 855 1000 1250 mV mV mV mV 60 µA 2 .5 µA 1 00 µA 1,5 pF 1,75 V