BAV70LT1

Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes BAV70LT1 FEATURES Power dissipation PD: 225 mW(Tamb=25℃) 1. 0 2. 4 1. 3 SWITCHING DIODE SOT-23 TJ, Tstg: -55℃ to +15℃ 0. 95 Forward Current 200 mA IF: Reverse Voltage 70 V VR: Operating and storage junction temperature range 2. 9 1. 9 0. 95 Unit: mm M ki ng A4 ar ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR unless otherwise specified) Test conditions MIN 70 2.5 MAX UNIT V IR= 100µA VR=70V 0. 4 µA IF=1mA Forward voltage VF IF=10mA IF=50mA IF=150mA Diode capacitance CD VR=0V,f=1MHz IF=IR=10mA Reverse recovery time t rr 715 855 1000 1250 1.5 mV pF IR=1mA ,VR=5V RC=100Ω 6 nS