BAV99T

Transys Electronics LIMITED SOT-523 Plastic-Encapsulated Diodes BAS16T/BAW56T/BAV70T/BAV99T SWITCHING DIODE FEATURES Power dissipation PD: 150 mW (Tamb=25℃) SOT-523 Forward Current 75 m A IF: Reverse Voltage 85 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Symbol V(BR) IR1 Reverse voltage leakage current IR2 unless otherwise specified) Test conditions MIN 85 2 0.03 715 855 1000 1250 1.5 4 mV MAX UNIT V IR= 100µA VR=75V VR=25V IF=1mA µA µA Forward voltage VF IF=10mA IF=50mA IF=150mA Diode capacitance CD t rr VR=0V, f=1MHz pF nS Reverse recovery time Typical Characteristics BAS16T/BAW56T/BAV70T/BAV99T