Transys
Electronics
LIMITED
SOT-323 Plastic-Encapsulated Diode
BAV99W
FEATURES
1. 25¡ À0. 05
1. 01 R EF
SWITCHING DIODE
SOT-323
Power dissipation PD: 200 mW (Tamb=25℃)
1. 30¡ À0. 03
2. 30¡ À0. 05
Collector current 150 mA IF: Collector-base voltage 75 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
Unit: mm
Marking: KJG
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) R IR
unless otherwise specified)
Test conditions MIN 75 2.5 715 855 1000 1250 2 MAX UNIT V
IR= 100µA VR=75V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V, f=1MHz IF=IR=10mA
0. 30
Forward voltage
VF
Diode capacitance
CD
Reveres recovery time
trr
Irr=0.1×IR RC=100Ω
4
2. 00¡ À0. 05
µA
mV
pF
nS
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