BAW56LT1

Transys Electronics LIMITED SOT-23 Plastic-Encapsulate Diodes BAW56LT1 FEATURES Power dissipation PD: 225 mW (Tamb=25℃) 1. 0 SWITCHING DIODE SOT-23 Forward Current 200 m A IF: Reverse Voltage 70 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 4 1. 3 2. 9 1. 9 0. 95 0. 95 Unit: mm M ki ng A1 ar ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR unless otherwise specified) Test conditions MIN 70 2.5 MAX UNIT V IR= 100µA VR=70V 0. 4 µA IF=1mA Forward voltage VF IF=10mA IF=50mA IF=150mA Diode capacitance CD t rr 715 855 1000 1250 2 6 mV VR=0V, f=1MHz pF nS Reverse recovery time