BAW56W

Transys Electronics LIMITED SOT-323 Plastic-Encapsulated Diode BAW56W FEATURES 1. 25¡ À0. 05 1. 01 R EF SWITCHING DIODE SOT-323 Power dissipation PD: 200 mW (Tamb=25℃) 1. 30¡ À0. 03 2. 30¡ À0. 05 Collector current 150 mA IO: Collector-base voltage 75 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ Unit: mm Marking: KJC ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) R IR unless otherwise specified) Test conditions MIN 75 2.5 715 855 1000 1250 2 4 MAX UNIT V IR= 100µA VR=75V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V, f=1MHz IF=IR=10mA Irr=0.1×IR 0. 30 Forward voltage VF Diode capacitance Reveres recovery time CD trr 2. 00¡ À0. 05 µA mV pF nS