BD233

Transys Electronics LIMITED TO-126 Plastic-Encapsulated Transistors BD233/235/237 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-126 1. EMITTER 1.25 W (Tamb=25℃) 2. COLLECTOR 3. BASE Collector current 2 A ICM: Collector-base voltage BD233 : 45 V V(BR)CBO: BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage BD233 BD235 BD237 Collector-emitter breakdown voltage BD233 BD235 BD237 Emitter-base breakdown voltage Collector cut-off current BD233 BD235 BD237 Emitter cut-off current IEBO HFE(1) DC current gain HFE(2) Collector-emitter saturation voltage Transition frequency VCE(sat) fT ICBO V(BR)EBO V(BR)CEO V(BR)CBO 123 unless otherwise specified) Test conditions MIN 45 Ic= 100µA, IE=0 60 100 45 Ic= 10mA, IB=0 60 80 IE= 100µA, IC=0 VCB= 45V, IE=0 VCB= 60V, IE=0 VCB= 100V, IE=0 VEB= 5V, IC=0 VCE= 2V, IC=150mA VCE=2V, IC= 1A IC=1A, IB= 100m A VCE=10V, Ic=250mA f =10MHz 3 40 25 0.6 V MHz 1 mA 100 µA 5 V V V MAX UNIT Symbol