BF821

Transys Electronics LIMITED SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector–emitter voltage (RBE = 2,7 kW ) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature D.C. current gain –IC = 25 mA; –VCE = 20 V Feedback capacitance at f = 1 MHz · IC = 0; –VCE = 30 V Transition frequency at f = 35 MHz –IC = 10 mA; –VCE = 10 V –V CB0 –V CE0 –V CER –I CM Ptot Tj hFE Cre fT BF821 max. 300 max. — max. 300 max. max. max. > < > BF823 250 V 250 V –V mA mW °C 100 250 150 50 1,6 60 pF MHz BF821 BF823 RATINGS (at TA = 25°C unless otherwise specified) Limiting values BF821 BF823 Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector–emitter voltage (RBE = 2,7 kW ) Emitter–base voltage (open collector) Collector current (d.c.) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector cut–off current IE = 0; –VCB = 200V Collector–emitter voltage RBE = 2,7 kW ; VCE = 250 V RBE = 2,7kW ; VCE = 200V; Tj = 150°C Saturation voltage –IC = 30 mA; –lB = 5 mA D.C. current gain IC = 25 mA; –VCE = 20 V Transition frequency at f = 35 MHz –IC = 10 mA; —VCE = 10 V Feedback capacitance at f = 1 MHz IC = 0; –VCE = 30 V –V CB0 –V CE0 –V CER –V EB0 –IC –I CM Ptot Tstg Tj max. 300 max. — max. 300 max. max. max. max. max. 5 50 100 250 V 250 V —V V mA mA mW °C °C 250 –55 to +150 150 Rth j–a = 500 KW / BF821 –I CB0 < 10 50 10 0,8 50 60 1,6 BF823 10 nA 50 nA 10 mA V –I CER < –I CER < –V CEsat < hFE fT Cre > > < MHz pF