BUX84

Transys Electronics LIMITED TO-220 Plastic Package BUX84, BUX84A BUX84, 84A NPN PLASTIC POWER TRANSISTORS High Voltage, High Speed Power Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O M IN. 14.42 9.63 3.56 M A X. N L O 123 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 A O ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage (VBE = 0) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 0.3A; IB = 30 mA D.C. current gain IC = 0.1 A; VCE = 5 V VCES VCEO IC Ptot Tj VCEsat hFE 84 max. 800 max. 400 max. max. max. max. 1.5 min. 30 84A 800 V 400 V 2.0 A 40 W 150 °C 0.8 V RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-emitter voltage (VBE = 0) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCES VCEO VEBO 84 max. 800 max. 400 max. 84A 800 V 400 V 5.0 V All dim insions in m m . K BUX84, BUX84A Collector current Collector current (Peak value) Base current Total power dissipation up to TC = 25°C Junction temperature Storage temperature THERMAL RESISTANCE From junction to case CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current VBE = 0; VCE = Rated VCES VBE = 0; VCE = Rated VCES; TC = 125°C Emitter cut-off current IC = 0; VEB = 5V Breakdown voltages IC = 100 mA; IB = 0 IC = 1 mA; VBE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 0.3 A; IB = 30 mA IC = 1 A; IB = 0.2 A D.C. current gain IC = 0.1 A; VCE = 5 V Transition frequency f = 1 MHz IC = 0.2 A; VCE = 10 V Switching time IC = 1A; VCC = 250V IB = 0.2A; –IB = 0.4A Turn on time Storage time Fall time IC ICM IB Ptot Tj T stg Rth j–c max. max. max. max. max. 2.0 3.0 0.75 40 150 –65 to +150 3.125 A A A W ºC ºC °C/W = 84 ICES ICES IEBO max. max. max. 0.2 1.5 1.0 400 800 5.0 84A mA mA mA V V V 0.8 V 1.0 V V VCEO(sus)* min. VCES min. VEBO min. VCEsat* VCEsat* VBEsat* hFE* fT max. 1.5 max. 3.0 max. min. typ. 1.1 30 20 MHz ton ts tf max max. max. 0.5 3.5 1.4 µs µs µs * Pulsed: pulse duration = 300 µs; duty cycle ≤ 2%.