BZX85C

Transys Electronics LIMITED SILICON PLANAR ZENER DIODES BZX85C 2V7 to 51V DO-41 1.3W These Zeners Are Best Suited For Industrial Purpose, Military & Space Applications. When Hermetically Sealed in Glass With Double Stud. This Passivated Chip Provides Excellent Stability & Reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION SYMBOL VALUE PTA 1.3 Power Dissipation (1) PS 10 Surge Power Dissipation pulse Width =10ms -55 to+175 Tj,Tstg Operating And Storage Junction Temperature Range TL 230 Maximum Lead Temperature for Soldering During 10 sec @ 4mm From Case Rth(j-a) 115.4 Thermal Resistance Junction to Ambient (1) VF 1.0 Forward Voltage @ IF=200mA (1) On infinite heatsink with 4mm Lead Length ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified) Device VZT rZT IZT rZK IZK Temp. Coeff IR @ @IZT* @IZT* of Zener Ta= @IZK Voltage typ 25 deg C 150degC min max max max max max (V) (V) (ohm) (mA) (ohm) (mA) (%/deg C) (uA) (uA) BZX85C 2V7 2.50 2.90 20 80 400 1.0 -0.07 150 300 BZX85C 3V0 2.80 3.20 20 80 400 1.0 -0.07 100 300 BZX85C 3V3 3.10 3.50 20 80 400 1.0 -0.06 40 200 BZX85C 3V6 3.40 3.80 20 70 500 1.0 -0.06 20 50 BZX85C 3V9 3.70 4.10 15 60 500 1.0 -0.05 10 20 BZX85C 4V3 4.00 4.60 13 50 500 1.0 -0.03 3.0 10 BZX85C 4V7 4.40 5.00 13 45 500 1.0 -0.01 3.0 10 BZX85C 5V1 4.80 5.40 10 45 500 1.0 +0.01 1.0 10 BZX85C 5V6 5.20 6.00 7 45 400 1.0 +0.03 1.0 10 BZX85C 6V2 5.80 6.60 4 35 300 1.0 +0.04 1.0 10 BZX85C 6V8 6.40 7.20 3.5 35 300 1.0 +0.05 1.0 10 BZX85C 7V5 7.00 7.90 3 35 200 0.5 +0.05 1.0 10 BZX85C 8V2 7.70 8.70 5 25 200 0.5 +0.06 1.0 10 BZX85C 9V1 8.50 9.60 5 25 200 0.5 +0.06 1.0 10 BZX85C 10 9.40 10.60 7.5 25 200 0.5 +0.07 0.5 10 BZX85C 11 10.40 11.60 8 20 300 0.5 +0.07 0.5 10 BZX85C 12 11.40 12.70 9 20 350 0.5 +0.07 0.5 10 BZX85C 13 12.40 14.10 10 20 400 0.5 +0.07 0.5 10 BZX85C 15 13.80 15.60 15 15 500 0.5 +0.08 0.5 10 BZX85C 16 15.30 17.10 15 15 500 0.5 +0.08 0.5 10 BZX85C 18 16.80 19.10 20 15 500 0.5 +0.08 0.5 10 BZX85C 20 18.80 21.20 24 10 600 0.5 +0.08 0.5 10 BZX85C 22 20.80 23.30 25 10 600 0.5 +0.08 0.5 10 BZX85C 24 22.80 25.60 25 10 600 0.5 +0.08 0.5 10 UNIT W W deg C deg C deg C/mW V VR IZM IZSM## (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 2.0 3.0 4.0 4.5 6.2 6.8 7.0 8.2 9.1 10 11 12 13 15 16 18 (mA) 370 340 320 290 280 250 215 200 190 170 155 140 130 120 105 97 88 79 71 66 62 56 52 47 (mA) 2874 2604 2381 2193 2033 1812 1667 1543 1389 1263 1157 1055 958 868 786 718 656 591 534 487 436 393 358 326 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified) Device VZT rZT IZT rZK IZK Temp. Coeff IR @ VR @IZT* @IZT* of Ta= @IZK Zener Voltage 25 deg C 150degC min max max max typ max max (V) (V) (ohm) (mA) (ohm) (mA) (%/deg C) (uA) (uA) (V) BZX85C 27 25.10 28.90 30 8.0 750 0.25 +0.09 0.5 10 20 BZX85C 30 28.00 32.00 30 8.0 1000 0.25 +0.09 0.5 10 22 BZX85C 33 31.00 35.00 35 8.0 1000 0.25 +0.09 0.5 10 24 BZX85C 36 34.00 38.00 40 8.0 1000 0.25 +0.09 0.5 10 27 BZX85C 39 37.00 41.00 50 6.0 1000 0.25 +0.09 0.5 10 30 BZX85C 43 40.00 46.00 50 6.0 1000 0.25 +0.09 0.5 10 33 BZX85C 47 44.00 50.00 90 4.0 1500 0.25 +0.09 0.5 10 36 BZX85C 51 48.00 54.00 115 4.0 1500 0.25 +0.09 0.5 10 39 *Pulse Condition : 20ms