MMBD4448W

Transys Electronics LIMITED SOT-323 Plastic-Encapsulated Diode MMBD4448W FEATURES 1. 25¡ À0. 05 1. 01 R EF SWITCHING DIODE SOT-323 Power dissipation PD: 200 mW (Tamb=25℃) 1. 30¡ À0. 03 2. 30¡ À0. 05 Collector current 250 mA IO: Collector-base voltage 75 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ Unit: mm Marking: KA3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) R IR unless otherwise specified) Test conditions IR= 10µA VR=20V VR=75V IF=5mA IF=10mA IF=100mA IF=150mA MIN 75 0.025 2.5 0.72 0.855 1 1.25 4 4 V MAX UNIT V 0. 30 2. 00¡ À0. 05 µA Forward voltage VF Diode capacitance CD t rr VR=0V, f=1MHz IF=IR=10mA Irr=0.1×IR ,RL=100Ω pF nS Reverse recovery time Test period