MMBD914LT1

Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes MMBD914LT1 FEATURES Power dissipation 1. 0 SWITCHING DIODE SOT-23 PD: 225 mW (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ 0. 95 Unit: mm M ki ng 5D ar ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR unless otherwise specified) Test conditions MIN 75 2.5 MAX UNIT V IR= 100µA VR=75V 0. 4 Forward Current 200 mA IF: Reverse Voltage 75 V VR: Operating and storage junction temperature range 2. 4 1. 3 2. 9 1. 9 0. 95 µA IF=1mA Forward voltage VF IF=10mA IF=50mA IF=150mA Diode capacitance CD VR=0V, f=1MHz IF=IR=10mA Reverse recovery time t rr 715 855 1000 1250 20 mV pF VR=5V RC=100Ω 4 nS