MMST5401

Transys Electronics LIMITED SOT-323 Plastic-Encapsulated Transistors SOT-323 MMST5401 FEATURES Power dissipation PCM: TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 1. 01 R EF 0.2 W (Tamb=25℃) 2. 30¡ À0. 05 Collector current -0.2 A ICM: Collector-base voltage -160 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) VCE(sat) Collector-emitter saturation voltage VCE(sat) VBE(sat) Base-emitter voltage VBE(sat) Transition frequency Collector output capacitance 1. 30¡ À0. 03 Unit: mm unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-100µA, IE=0 Ic=-1mA, IB=0 IE=-10µA, IC=0 VCB=-120V, IE=0 VEB=-3V, IC=0 VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz VCE=-5V, Ic=-0.2mA, f=1KHZ, Rg=10Ω -160 -150 -5 -50 -50 50 60 50 -0.2 -0.5 -1 -1 100 300 6 0. 30 2. 00¡ À0. 05 nA nA 240 V V V V MHz pF fT Cob NF Noise figure 8 dB Marking K4M