MMST5551

Transys Electronics LIMITED SOT-323 Plastic-Encapsulated Transistors SOT-323 MMST5551 FEATURES Power dissipation PCM: TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 1. 01 R EF 0.2 W (Tamb=25℃) 2. 30¡ À0. 05 Collector current 0.2 A ICM: Collector-base voltage 160 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) VCE(sat) Collector-emitter saturation voltage VCE(sat) VBE(sat) Base-emitter voltage VBE(sat) Transition frequency Collector output capacitance 1. 30¡ À0. 03 Unit: mm unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=100µA, IE=0 Ic=1mA, IB=0 IE=10µA, IC=0 VCB=120V, IE=0 VEB=3V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=-10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VCE=5V, Ic=0.2mA, f=1KHZ, Rg=10Ω 180 160 5 50 50 80 80 30 0.15 0.2 1 1 100 300 6 0. 30 2. 00¡ À0. 05 nA nA 250 V V V V MHz pF fT Cob NF Noise figure 8 dB Marking K4N