MMSTA92

Transys Electronics LIMITED SOT-323 Plastic-Encapsulated Transistors SOT-323 MMSTA92 FEATURES Power dissipation PCM: TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 0.2 W (Tamb=25℃) Collector current -0.3 A ICM: Collector-base voltage -310 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) Unit: mm unless otherwise specified) Test conditions MIN -310 -305 -5 -0.25 -0.1 60 100 60 -0.2 -0.9 50 V V MHz 200 TYP MAX UNIT V V V Ic= -100µA, IE=0 Ic= -1 mA, IB=0 IE= -100µA, IC=0 VCB= -200V, IE=0 VEB= -5V, IC=0 VCE= -10V, IC=- 1 mA VCE= -10V, IC = -10 mA VCE= -10 V, IC= -80 mA IC= -20 mA, IB= -2 mA IC= -20 mA, IB= -2 mA VCE= -20 V, IC= -10 mA µA µA fT f = 30MHz DEVICE MARKING MMSTA92=K3R