MPSA43

Transys Electronics LIMITED NPN EPITAXIAL PLANAR SILICON TRANSISTORS MPSA 42 MPSA 43 TO-92 CBE E BC High Voltage Transistors. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL MPSA42 Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation @ Ta=25 degC Derate above 25 deg C Power Dissipation @ Tc=25 degC Derate above 25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junction to Ambient VCEO VCBO VEBO IC PD PD Tj, Tstg 300 300 MPSA43 200 200 UNIT V V V mA mW mW./deg C W mW./deg C deg C 6 500 625 5 1.5 12 -55 to +150 Rth(j-c) Rth(j-a) 83.3 200 deg C/W deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MPSA42 VCEO IC=1mA,IB=0 >300 Collector -Emitter Voltage VCBO IC=100uA.IE=0 >300 Collector -Base Voltage VEBO IE=100uA, IC=0 >6.0 Emitter-Base Voltage ICBO VCB=200V, IE=0 40 IC=30mA,VCE=10V >40 200 >6.0 40 >40