MPSA44

Transys Electronics LIMITED NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPSA44 MPSA45 TO-92 Plastic Package E BC High Voltage Transistors Complementary of MPSA44 is MPSA94 ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air SYMBOL VCBO VCEO VEBO IC PD PD Tj, Tstg MPSA44 500 400 6.0 300 625 5.0 1.5 12 - 55 to +150 MPSA45 400 350 UNITS V V V mA mW mW/ºC W mW/ºC ºC Rth (j-c) Rth (j-a) 83.3 200 ºC ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Voltage SYMBOL VCEO TEST CONDITION IC=1mA, IB=0 MPSA44 MPSA45 IC=100µA, VBE=0 MPSA44 MPSA45 IC=100µA, IE=0 MPSA44 MPSA45 IE=10µA, IC=0 V CB=400V, IE=0, MPSA44 VCB=320V, IE=0, Collector Cut Off Current Emitter Cut off Current ICES IEBO MPSA45 VCE=400V, VBE = 0, MPSA44 VCE=320V, VBE = 0, MPSA45 VEB=4V, IC = 0 MIN 400 350 500 400 500 400 6 100 100 500 500 100 MAX UNITS V V V V V V V nA nA nA nA nA Collector Emitter Voltage VCES Collector Base Voltage VCBO Emitter Base Voltage Collector Cut Of Current VEBO ICBO NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPSA44 MPSA45 TO-92 Plastic Package E BC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION *hFE VCE=10V, IC=1mA DC Current Gain VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA Collector Emitter Saturation Voltage *VCE (sat) IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA Base Emitter Saturation Voltage DYNAMIC CHARACTERISTICS DESCRIPTION Output Capacitance Input Capacitance Small Signal Current Gain *VBE (sat) IC=10mA, IB=1mA MIN 40 50 45 40 MAX 200 UNITS 0.40 0.50 0.75 0.75 V V V V SYMBOL Cobo Cibo hfe TEST CONDITION VCB=20V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz IC=10mA, VCE=10V, f=10MHz MIN MAX 7 130 UNITS pF pF 2 *Pulse test: Pulse Width