PN4356

Transys Electronics LIMITED PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous Power Dissipation@Ta=25°C Power Dissipation@ Tc=25°C Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 4354 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector-Cut off Current VCEO(sus)* VCBO VEBO ICBO IC=10mA,IB=0 (pulsed) IC=10uA,IE=0 IE=10uA,IC=0 VCB=50V, IE = 0 VcB=50V, IE = 0, Ta =75°C VBE =4V,IC= 0 >60 >60 SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg 4354 60 60 4355 60 60 5 500 625 1.0 -55 to +150 4356 80 80 UNITS V V V mA mW mW °C 4355 >60 >60 >5 4356 >80 >80 40 >30 >60 >75 100-400 >75 >75 >25 >40 50-250 >40 >30 Commom Emitter Small Signal Current Gain l hfe l IC=50mA, VCE=10V f=100MHz 1.0-5.0 1.0 - 1.5 1.0 - 5.0 Collector Emitter Sat Voltage VCE(sat) * IC=150mA,IB=15mA IC=500mA,IB=50mA IC=1A,IB=100mA PN4355