RB425D

SOT-23-3L RB425D + + 1. 02 0. 95¡ À0. 025 2. 8 0¡ À0 . 05 1 . 6 0¡ À0. 0 5 Schottky barrier Diodes FEATURES Small surface mounting type Low reverse current and low forward voltage High reliability 1. 9 Marking: D3L Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃ Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 100 1 125 -40~+125 Unit V V mA A ℃ ℃ Electrical Ratings @TA=25℃ Parameter Symbol VF1 Forward voltage VF2 Reverse current Capacitance between terminals IR CT 6 0.34 30 V µA Min. Typ. Max. 0.55 Unit V Conditions IF=100mA IF=10mA VR=10V VR=10V, f=1MHZ pF 0. 35 2. 92¡ À0. 05