RB501V-40

RB501V-40 Schottky Diodes FEATURES High current rectifier Schottky diode Low voltage, low inductance For power supply MAKING: 4 Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃ Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 45 40 0.1 1 125 -55~+125 Unit V V A A ℃ ℃ Electrical Ratings @TA=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT 6 Min. Typ. Max. 0.55 0.34 30 Unit V µA pF Conditions IF=100mA IF=10mA VR=10V VR=10V, f=1MHZ