RB706F-40

RB706F-40 FEATURES SCHOTTKY BARRIER DIODE SOT-323 1. 25¡ À0. 05 1. 01 R EF Power dissipation PD: 200 mW (Tamb=25℃) 1. 30¡ À0. 03 2. 30¡ À0. 05 Collector current 30 mA IF: Collector-base voltage 40 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: Unit: mm 1 3 2 MARKING: 3J ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Symbol V(BR) IR VF CD unless otherwise specified) Test conditions MIN 40 1 0.37 5 MAX UNIT V IR= 100µA VR=10V IF=1mA VR=1V, f=1MHz 0. 30 2. 00¡ À0. 05 µA V pF