RB715W

RB715W FEATURES: Power dissipation PD: SCHOTTKY BARRIER DIODE SOT-523 200 mW (Tamb=25℃) Collector current 30 mA IF: Collector-base voltage 40 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: 1 3 2 MARKING: 3D ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Symbol V(BR) IR VF CD Test conditions MIN 40 MAX UNIT V IR= 100µA VR=10V IF=1mA VR=1V, f=1MHz 1 0.37 2 µA V pF