RB751S-40
Schottky barrier Diodes
FEATURES Small surface mounting type Low reverse current and low forward voltage High reliability
Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃ Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 40 30 30 200 125 -55~+125 Unit V V mA mA
℃ ℃
Electrical Ratings @TA=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT 2 Min. Typ. Max. 0.37 0.5 Unit V µA pF Conditions IF=1mA VR=30V VR=1V, f=1MHZ
Typical Characteristics
RB751S-40
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