RB751S-40
Schottky barrier Diodes
FEATURES Small surface mounting type Low reverse current and low forward voltage High reliability
Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃ Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 40 30 30 200 125 -55~+125 Unit V V mA mA
℃ ℃
Electrical Ratings @TA=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT 2 Min. Typ. Max. 0.37 0.5 Unit V µA pF Conditions IF=1mA VR=30V VR=1V, f=1MHZ
Typical Characteristics
RB751S-40
很抱歉，暂时无法提供与“RB751S-40”相匹配的价格&库存，您可以联系我们找货
免费人工找货- 国内价格
- 1+2.05396
- 10+1.9731
- 100+1.7305
- 500+1.68199
- 国内价格
- 5+0.36814
- 20+0.33566
- 100+0.30317
- 500+0.27069
- 1000+0.25553
- 2000+0.2447
- 国内价格
- 5+0.40597
- 20+0.37014
- 100+0.33432
- 500+0.2985
- 1000+0.28179
- 2000+0.26985
- 国内价格
- 10+0.21042
- 50+0.19358
- 200+0.17956
- 600+0.16553
- 1500+0.15431
- 3000+0.14729
- 国内价格
- 1+0.13882
- 100+0.12957
- 300+0.12031
- 500+0.11106
- 2000+0.10643
- 5000+0.10365
- 国内价格
- 1+0.08122
- 30+0.07812
- 100+0.07502
- 500+0.06882
- 1000+0.06572
- 2000+0.06386
工商网监
湘ICP备2023018690号
