1
TC1410 TC1410N 0.5A HIGH-SPEED MOSFET DRIVERS
FEATURES
s s s s s s s s s s Latch-Up Protected: Will Withstand 500mA Reverse Current Input Will Withstand Negative Inputs Up to 5V ESD Protected .....................................................4kV High Peak Output Current ............................... 0.5A Wide Operating Range .......................... 4.5V to 16V High Capacitive Load Drive Capability ............................ 500pF in 25nsec Short Delay Time .................................. 35nsec Typ Consistent Delay Times With Changes in Supply Voltage Matched Delay Times Low Supply Current — With Logic “1” Input ................................. 500µA — With Logic “0” Input ................................. 150µA Low Output Impedance ..................................... 16Ω Pinout Same as TC1411/12/13
GENERAL DESCRIPTION
The TC1410/1410N are 0.5V CMOS buffer/drivers . They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logic upset, up to 500mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET drivers, the TC1410/1410N can easily switch 500pF gate capacitance in 25nsec with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater accuracy.
2 3 4 5 6
s s
ORDERING INFORMATION
Part No. Package
8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP
PIN CONFIGURATIONS
VDD 1 IN 2 NC 3 GND 4 2 6, 7 8 VDD 7 OUT VDD 1 IN 2 NC 3 GND 4 2 6, 7 8 VDD 7 OUT
Temp. Range
0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C
TC1410
6 OUT 5 GND
TC1410N
6 OUT 5 GND
TC1410COA TC1410CPA TC1410EOA TC1410EPA TC1410NCOA TC1410NCPA TC1410NEOA TC1410NEPA
INVERTING
NONINVERTING
NC = NO INTERNAL CONNECTION NOTE: SOIC pinout is identical to DIP.
FUNCTIONAL BLOCK DIAGRAM
TC1410
INVERTING OUTPUTS
VDD
300mV
OUTPUT
NONINVERTING OUTPUTS
7
INPUT 4.7V
TC1410N
GND EFFECTIVE INPUT C = 10pF
TC1410/N-8 10/15/96
8
4-183
TELCOM SEMICONDUCTOR, INC.
0.5A HIGH-SPEED MOSFET DRIVERS TC1410 TC1410N
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND – 5.0V) Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C Package Thermal Resistance CerDIP RθJ-A ................................................ 150°C/W CerDIP RθJ-C .................................................. 50°C/W PDIP RθJ-A ................................................... 125°C/W PDIP RθJ-C ..................................................... 42°C/W SOIC RθJ-A ................................................... 155°C/W SOIC RθJ-C ..................................................... 45°C/W Operating Temperature Range C Version ............................................... 0°C to +70°C E Version .......................................... – 40°C to +85°C Power Dissipation (TA ≤ 70°C) Plastic DIP ...................................................... 730mW CerDIP ............................................................800mW SOIC ............................................................... 470mW
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD ≤ 16V, unless otherwise specified. Typical values are measured at TA=25°C; VDD =16V. Min
2.0 — –1 – 10 — — — — — — 0.5
Symbol Input
VIH VIL IIN
Parameter
Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current
Test Conditions
Typ
— — — — — — 16 20 20 0.5 —
Max
— 0.8 1 10 V 0.025 22 28 28 — —
Unit
V V µA
– 5V ≤ VIN ≤ VDD – 40°C ≤ TA ≤ 85°C DC Test DC Test VDD = 16V, IO = 10mA
TA = 25°C
Output
VOH VOL RO High Output Voltage Low Output Voltage Output Resistance VDD – 0.025 TA=25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C VDD = 16V V Ω
IPK IREV
Peak Output Current Latch-Up Protection Withstand Reverse Current Rise Time
VDD = 16V Duty Cycle ≤ 2% t ≤ 300 µsec Figure 1
A A
Switching Time (Note 1)
tR TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C VDD = 16V — — — — — — — — — — — — — — 25 27 29 25 27 29 30 33 35 30 33 35 0.5 0.1 35 40 40 35 40 40 40 45 45 40 45 45 1.0 0.15 nsec
tF
Fall Time
Figure 1
nsec
tD1
Delay Time
Figure 1
nsec
tD2
Delay Time
Figure 1
nsec
Power Supply
IS Power Supply Current VIN = 3V VIN = 0V mA
NOTE: 1. Switching times are guaranteed by design.
4-184
TELCOM SEMICONDUCTOR, INC.
0.5A HIGH-SPEED MOSFET DRIVERS TC1410 TC1410N
1
+5V INPUT
0V VDD
90%
2
tR
90%
10% tD1 90%
VDD = 16V
4.7µF 0.1µF
tF
tD2
OUTPUT
1,8
INPUT
3 4
2
6,7
0V OUTPUT
10%
10%
CL = 500pF
Inverting Driver TC1410
+5V INPUT 90%
TC1410 TC1410N
4,5
0V
10% 90% 90% tD2 10%
VDD
INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10ns
tD1
OUTPUT 0V 10%
tR
tF
Noninverting Driver TC1410N
5 6
Figure 1. Switching Time Test Circuit
Thermal Derating Curves
1600 1400 8 Pin DIP 8 Pin CerDIP 1000 800 8 Pin SOIC 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120
MAX. POWER (mV)
1200
7
AMBIENT TEMPERATURE (°C)
8
TELCOM SEMICONDUCTOR, INC.
4-185
0.5A HIGH-SPEED MOSFET DRIVERS TC1410 TC1410N
TYPICAL CHARACTERISTICS
Quiescent Supply Current vs. Supply Voltage
TA = 25°C
500 500
Quiescent Supply Current vs. Temperature
VSUPPLY = 16V VIN = 3V
400
400
ISUPPLY (µA)
ISUPPLY (µA)
VIN = 3V
300
300
200
200
100
VIN = 0V
4 6 8 10 12 14 16
100
VIN = 0V
-40 -20 0 20 40 60 80
0
0
VDD (VOLTS)
TEMPERATURE (°C)
Input Threshold vs. Supply Voltage
TA = 25°C
1.6 1.6
Input Threshold vs. Temperature
VSUPPLY = 16V
VTHRESHOLD (VOLTS)
VTHRESHOLD (VOLTS)
1.5
1.5
VIH
1.4
VIH
1.4
1.3
1.3
1.2
VIL
1.2
VIL
1.1
4
6
8
10
12
14
16
1.1
-40
-20
VDD (VOLTS)
TEMPERATURE (°C)
0
20
40
60
80
High-State Output Resistance
13 11 9 13 11 9
T
A
Low-State Output Resistance
Rds (ON) W
7 5 3 1
=8
Rds (ON) W
5°C
7 5 3 1
T
A
=8
5°C
TA = 2 5°C
TA = – 40°C
TA =
25°C
40°C
TA = –
4
6
8
10
12
14
16
4
6
8
10
12
14
16
VDD (VOLTS)
4-186
VDD (VOLTS)
TELCOM SEMICONDUCTOR, INC.
0.5A HIGH-SPEED MOSFET DRIVERS TC1410 TC1410N
TYPICAL CHARACTERISTICS (Cont.)
Rise Time vs. Supply Voltage
CLOAD = 500pF
100 100
1
Fall Time vs. Supply Voltage
CLOAD = 500pF
2 3
80
80
60
TFALL (nsec)
TRISE (nsec)
TA = 85°C TA = 25°C
60
TA = 85°C
40
40
TA = 25°C
20
20
TA = –40°C
4 6 8 10 12 14 16
TA = –40°C
0 4 6 8 10 12 14 16
0
VDD (VOLTS)
VDD (VOLTS)
TD1 Propagation Delay vs. Supply Voltage
CLOAD = 500pF
100
TD2 Propagation Delay vs. Supply Voltage
CLOAD = 500pF
100
4 5
80
80
TD1 (nsec)
TD2 (nsec)
60
TA = 85°C
60
TA = 25°C
TA = 85°C
TA = 25°C
40
40
TA = –40°C
20
20
TA = –40°C
0
4
6
8
10
12
14
16
0
4
6
8
10
12
14
16
VDD (VOLTS)
VDD (VOLTS)
6 7
Rise and Fall Times vs. Capacitive Load
TA = 25°C, VDD = 16V TRISE
Propagation Delays vs. Capacitive Load
TA = 25°C, VDD = 16V
PROPAGATION DELAYS (nsec)
100
45
TD2
41
TRISE, TFALL (nsec)
80
TFALL
60
37
TD1
40
33
20
29
0
0
500
1000
1500
2000
2500
3000
3500
25
0
500
1000
1500
2000
2500
3000
3500
CLOAD (pF)
CLOAD (pF)
4-187
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TELCOM SEMICONDUCTOR, INC.
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