TC1413NEPA

1 TC1413 TC1413N 3A HIGH-SPEED MOSFET DRIVERS FEATURES s s s s s s s s s s Latch-Up Protected: Will Withstand 500mA Reverse Current Input Will Withstand Negative Inputs Up to 5V ESD Protected .....................................................4kV High Peak Output Current .................................. 3A Wide Operating Range .......................... 4.5V to 16V High Capacitive Load Drive Capability ........................... 180 pF in 20nsec Short Delay Time .................................. 35nsec Typ Consistent Delay Times With Changes in Supply Voltage Matched Delay Times Low Supply Current — With Logic “1” Input ................................... 50µA — With Logic “0” Input ................................. 150µA Low Output Impedance .................................... 2.7Ω Pinout Same as TC1410/11/12 GENERAL DESCRIPTION The TC1413/1413N are 3A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity that occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET drivers, the TC1413/1413N can easily switch 1800pF gate capacitance in 20 ns with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater output accuracy. 2 3 4 5 6 7 s s ORDERING INFORMATION PIN CONFIGURATIONS VDD 1 IN 2 NC 3 GND 4 2 8 VDD 7 OUT VDD 1 IN 2 NC 3 GND 4 2 8 VDD 7 OUT Part No. TC1413COA TC1413CPA TC1413EOA TC1413EPA TC1413NCOA TC1413NCPA TC1413NEOA TC1413NEPA Package 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP Temp.Range 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C TC1413 6 OUT 5 GND 6, 7 TC1413N 6 OUT 5 GND 6, 7 INVERTING NONINVERTING NC = NO INTERNAL CONNECTION NOTE: SOIC pinout is identical to DIP. FUNCTIONAL BLOCK DIAGRAM TC1413 INVERTING OUTPUTS VDD 300mV OUTPUT NONINVERTING OUTPUTS INPUT 4.7V TC1413N GND EFFECTIVE INPUT C = 10pF TC1413/N-8 10/14/96 8 4-201 TELCOM SEMICONDUCTOR, INC. 3A HIGH-SPEED MOSFET DRIVERS TC1413 TC1413N ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +20V Input Voltage, IN A or IN B ..(VDD + 0.3V) to (GND – 5.0V) Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C Package Thermal Resistance CerDIP RθJ-A ................................................ 150°C/W CerDIP RθJ-C .................................................. 50°C/W PDIP RθJ-A ................................................... 125°C/W PDIP RθJ-C ..................................................... 42°C/W SOIC RθJ-A ................................................... 155°C/W SOIC RθJ-C ..................................................... 45°C/W Operating Temperature Range C Version ............................................... 0°C to +70°C E Version .......................................... – 40°C to +85°C Power Dissipation (TA ≤ 70°C) Plastic .............................................................730mW CerDIP ............................................................800mW SOIC ...............................................................470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD ≤ 16V, unless otherwise specified. Typical values are measured at TA = 25°C; VDD =16V. Min 2.0 — –1 – 10 Symbol Input VIH VIL IIN Parameter Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current Test Conditions Typ — — — — — — 2.7 3.3 3.3 3.0 — Max — 0.8 1 10 — 0.025 4 5 5 — — Unit V V µA – 5V ≤ VIN ≤ VDD TA = 25°C – 40°C ≤ TA ≤ 85°C Output VOH VOL RO High Output Voltage Low Output Voltage Output Resistance DC Test VDD – 0.025 DC Test — VDD = 16V, IO = 10 mA TA = 25°C — — 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C — VDD = 16V — Duty Cycle ≤ 2% 0.5 VDD = 16V t ≤ 300 µsec Figure 1 TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C — — — — — — — — — — — — — — V V Ω IPK IREV Peak Output Current Latch-Up Protection Withstand Reverse Current Rise Time A A Switching Time (Note 1) tR 20 22 24 20 22 24 35 40 40 35 40 40 0.5 0.1 28 33 33 28 33 33 45 50 50 45 50 50 1.0 0.15 nsec tF Fall Time Figure 1 nsec tD1 Delay Time Figure 1 nsec tD2 Delay Time Figure 1 nsec Power Supply IS Power Supply Current VIN = 3V VIN = 0V VDD = 16V mA NOTE: 1. Switching times are guaranteed by design. 4-202 TELCOM SEMICONDUCTOR, INC. 3A HIGH SPEED MOSFET DRIVERS TC1413 TC1413N 1 +5V INPUT 90% 2 tR 90% VDD= 16V 4.7µF 0.1µF 0V VDD 10% tD1 90% tF tD2 OUTPUT 1,8 INPUT 2 6,7 0V OUTPUT 10% 10% 3 4 CL = 1800pF Inverting Driver TC1413 +5V INPUT 90% TC1413 TC1413N 4,5 INPUT: 100kHz, square wave, tRISE = tFALL ≤ 10nsec 0V VDD 10% 90% 90% tD2 10% tD1 OUTPUT 0V 10% tR tF Noninverting Driver TC1413N Figure 1. Switching Time Test Circuit 5 6 7 Thermal Derating Curves 1600 1400 8 Pin DIP 8 Pin CerDIP 1000 800 8 Pin SOIC 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120 MAX. POWER (mV) 1200 AMBIENT TEMPERATURE (°C) 8 TELCOM SEMICONDUCTOR, INC. 4-203 3A HIGH-SPEED MOSFET DRIVERS TC1413 TC1413N TYPICAL CHARACTERISTICS Quiescent Supply Current vs. Supply Voltage TA = 25°C 500 500 Quiescent Supply Current vs. Temperature VSUPPLY = 16V VIN = 3V 400 400 ISUPPLY (µA) ISUPPLY (µA) VIN = 3V 300 300 200 200 100 0 4 6 8 10 12 VIN = 0V 14 16 100 VIN = 0V -40 -20 0 20 40 60 80 0 VDD (VOLTS) TEMPERATURE (°C) Input Threshold vs. Supply Voltage TA = 25°C 1.6 1.6 Input Threshold vs. Temperature VSUPPLY = 16V VTHRESHOLD (VOLTS) VTHRESHOLD (VOLTS) 1.5 1.5 VIH 1.4 VIH 1.4 1.3 1.3 1.2 VIL 1.2 VIL 1.1 4 6 8 10 12 14 16 1.1 -40 -20 VDD (VOLTS) TEMPERATURE (°C) 0 20 40 60 80 High-State Output Resistance 9 8 9 8 7 Low-State Output Resistance Rds (ON) W 7 T 5 4 3 A =8 Rds (ON) W 6 5° C 25°C 6 5 4 3 TA =8 5°C 25°C TA = TA = TA = 2 1 4 6 8 –40°C 2 1 12 14 16 4 6 8 TA = –40° C 10 10 12 14 16 VDD (VOLTS) 4-204 VDD (VOLTS) TELCOM SEMICONDUCTOR, INC. 3A HIGH SPEED MOSFET DRIVERS TC1413 TC1413N TYPICAL CHARACTERISTICS (Cont.) Rise Time vs. Supply Voltage CLOAD = 1800pF 70 60 70 60 50 1 Fall Time vs. Supply Voltage CLOAD = 1800pF 2 3 TRISE (nsec) 50 40 30 20 TA = 85°C TA = 25°C TFALL (nsec) 40 TA = 85°C 30 20 TA = 25°C TA = –40°C TA = –40°C 10 4 6 8 10 12 14 16 10 4 6 8 10 12 14 16 VDD (VOLTS) VDD (VOLTS) TD1 Propagation Delay vs. Supply Voltage CLOAD = 1800pF 110 100 90 80 TD2 Propagation Delay vs. Supply Voltage CLOAD = 1800pF 100 90 80 4 5 TD1 (nsec) 70 60 50 40 30 20 4 6 TA = 85°C TA = 25°C TD2 (nsec) 70 60 50 40 30 TA = 85°C TA = 25°C TA = –40°C 8 10 12 14 16 TA = –40°C 4 6 8 10 12 14 16 20 VDD (VOLTS) VDD (VOLTS) 6 7 Rise and Fall Times vs. Capacitive Load TA = 25°C, VDD = 16V TRISE Propagation Delays vs. Capacitive Load TA = 25°C, VDD = 16V PROPAGATION DELAYS (nsec) 40 35 34 33 TD2 TRISE, TFALL (nsec) 30 TFALL TD1 32 31 30 29 28 0 1000 2000 3000 4000 5000 20 10 0 0 1000 2000 3000 4000 5000 CLOAD (pF) CLOAD (pF) 4-205 8 TELCOM SEMICONDUCTOR, INC.